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resonant$552320$ - перевод на греческий
![A working mechanism of a resonant tunneling diode device and negative differential resistance in output characteristic. There is a negative resistance characteristic after the first current peak, due to a reduction of the first energy level below the source Fermi level with gate bias. (Left: [[band diagram]]; Center: [[transmission coefficient]]; Right: current–voltage characteristics). The negative resistance behavior shown in right figure is caused by relative position of confined state to source [[Fermi level]] and [[bandgap]].](https://commons.wikimedia.org/wiki/Special:FilePath/Rtd seq v3.gif?width=200 "A working mechanism of a resonant tunneling diode device and negative differential resistance in output characteristic. There is a negative resistance characteristic after the first current peak, due to a reduction of the first energy level below the source Fermi level with gate bias. (Left: [[band diagram]]; Center: [[transmission coefficient]]; Right: current–voltage characteristics). The negative resistance behavior shown in right figure is caused by relative position of confined state to source [[Fermi level]] and [[bandgap]].")
Определение
Википедия
A resonant-tunneling diode (RTD) is a diode with a resonant-tunneling structure in which electrons can tunnel through some resonant states at certain energy levels. The current–voltage characteristic often exhibits negative differential resistance regions.
All types of tunneling diodes make use of quantum mechanical tunneling. Characteristic to the current–voltage relationship of a tunneling diode is the presence of one or more negative differential resistance regions, which enables many unique applications. Tunneling diodes can be very compact and are also capable of ultra-high-speed operation because the quantum tunneling effect through the very thin layers is a very fast process. One area of active research is directed toward building oscillators and switching devices that can operate at terahertz frequencies.
